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1

On the influence of sputter etch cleaning on the silicidation, the thermal stability and the electrical characteristics of Ti/p−Si contacts

A.S. Vercaemst, R.L. Van Meirhaeghe, W.H. Laflère, F. Cardon, W. De Bosscher, R.J. Schreutelkamp

Journal:

Solid-State Electronics

Year:

1993

Language:

english

File:

PDF, 739 KB

english, 1993

2

Clinical Microscopy: Coulter STKS vs Abbott Cell-Dyn 3500 for Counting Lamellar Bodies in Amniotic Fluid

Lafler, Darlynn, Mendoza, Arturo, Poeltler, Debra, Wight, Nancy

Journal:

Laboratory Medicine

Year:

1998

Language:

english

File:

PDF, 10.25 MB

english, 1998

3

Current‐voltage characteristic of Ti‐pSi metal‐oxide‐semiconductor diodes

Hanselaer, P. L., Laflere, W. H., Van Meirhaeghe, R. L., Cardon, F.

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 699 KB

english, 1984

4

Long-term study of backgrounds in the DRIFT-II directional dark matter experiment

Brack, J, Daw, E, Dorofeev, A, Ezeribe, A C, Fox, J R, Gauvreau, J -L, Gold, M, Harmon, L, Harton, J L, Lafler, R, Landers, J M, Lauer, R, Lee, E R, Loomba, D, Matthews, J A J, Miller, E H, Monte, A,

Journal:

Journal of Instrumentation

Year:

2014

Language:

english

File:

PDF, 4.15 MB

english, 2014

5

Three Augustan Women Playwrights. By Constance Clark. New York: Peter Lang Publishing Inc., 1986. Pp. 355. $35.

Lafler, Joanne W.

Journal:

Theatre Research International

Year:

1988

Language:

english

File:

PDF, 183 KB

english, 1988

6

Refrigerated and Frozen Amniotic Fluid for Fetal Lung Maturity Testing and Lamellar Body Density Counts

Lafler, Darlynn, Mendoza, Arturo, Cousins, Larry, Poeltler, Debra

Journal:

Laboratory Medicine

Year:

1996

Language:

english

File:

PDF, 24.63 MB

english, 1996

7

The novel properties of SF 6 for directional dark matter experiments

Phan, N.S., Lafler, R., Lauer, R.J., Lee, E.R., Loomba, D., Matthews, J.A.J., Miller, E.H.

Journal:

Journal of Instrumentation

Year:

2017

Language:

english

File:

PDF, 1.27 MB

english, 2017

8

Measurement of directional range components of nuclear recoil tracks in a fiducialised dark matter detector

Battat, J.B.R., Daw, E.J., Ezeribe, A.C., Gauvreau, J.-L., Harton, J.L., Lafler, R., Lee, E.R., Loomba, D., Lynch, W., Miller, E.H., Mouton, F., Paling, S., Phan, N., Robinson, M., Sadler, S.W., Scarf

Journal:

Journal of Instrumentation

Year:

2017

Language:

english

File:

PDF, 2.18 MB

english, 2017

9

A morphologic study of pancreatic carcinoma with reference to multiple thrombi

C. James Lafler, Dorin L. Hinerman

Journal:

Year:

1961

Language:

english

File:

PDF, 1.01 MB

english, 1961

10

An XPS study of the dopants' valence states and the composition of CaS1 − xSex:Eu and SrS1 − xSex:Ce thin film electroluminescent devices

R. Vercaemst, D. Poelman, R.L. Van Meirhaeghe, L. Fiermans, W.H. Laflère, F. Cardon

Journal:

Journal of Luminescence

Year:

1995

Language:

english

File:

PDF, 955 KB

english, 1995

11

The influence of Se-coevaporation on the emission spectra of CaS:Eu and SrS:Ce thin film electroluminescent devices

D. Poelman, R. Vercaemst, R.L. Van Meirhaeghe, W.H. Laflère, F. Cardon

Journal:

Journal of Luminescence

Year:

1995

Language:

english

File:

PDF, 388 KB

english, 1995

12

Electron trapping in the oxide layer of MIS-type Al Au Ag and Sn-n-type GaAs Schottky barriers

W.H. Laflère, R.L. Van Meirhaeghe, F. Cardon

Journal:

Solid-State Electronics

Year:

1982

Language:

english

File:

PDF, 419 KB

english, 1982

13

Study of electron traps in the thin interfacial oxide layer of Al-, Au- and Sn-n GaAs Schottky barriers by detrapping experiments

R.L. Van Meirhaeghe, W.H. Laflère, F. Cardon

Journal:

Solid-State Electronics

Year:

1982

Language:

english

File:

PDF, 422 KB

english, 1982

14

On the difference in apparent barrier height as obtained from capacitance-voltage and current-voltage-temperature measurements on Al/p-InP Schottky barriers

Y.P. Song, R.L. Van Meirhaeghe, W.H. Laflère, F. Cardon

Journal:

Solid-State Electronics

Year:

1986

Language:

english

File:

PDF, 586 KB

english, 1986

15

A study of the electrical and interfacial properties of sputtered Ti/Si and sputtered TiSi2/Si Schottky barriers

W. De Bosscher, R.L. Van Meirhaeghe, A. De Laere, W.H. Laflère, F. Cardon

Journal:

Solid-State Electronics

Year:

1988

Language:

english

File:

PDF, 621 KB

english, 1988

16

On the electrical properties, the interfacial reactivity and the thermal stability of CoSi2/-, TiSi2/-, Co/- and Ti/p-InP Schottky barriers

L.M.O. Van den Berghe, R.L. Van Meirhaeghe, W.H. Laflère, F. Cardon

Journal:

Solid-State Electronics

Year:

1990

Language:

english

File:

PDF, 605 KB

english, 1990

17

Titanium silicide/p-Si Schottky barriers formed by rapid thermal processing in nitrogen

W. De Bosscher, R.L. Van Meirhaeghe, W.H. Laflère, F. Cardon

Journal:

Solid-State Electronics

Year:

1991

Language:

english

File:

PDF, 707 KB

english, 1991

18

Electrical characteristics of Al/SiO2/n-Si tunnel diodes with an oxide layer grown by rapid thermal oxidation

M. Depas, R.L. Van Meirhaeghe, W.H. Laflère, F. Cardon

Journal:

Solid-State Electronics

Year:

1994

Language:

english

File:

PDF, 828 KB

english, 1994

19

Hydrogen passivation caused by “soft” sputter etch cleaning of Si

A.S Vercaemst, R.L Van Meirhaeghe, W.H Laflere, F Cardon

Journal:

Solid-State Electronics

Year:

1995

Language:

english

File:

PDF, 465 KB

english, 1995

20

Tunnel oxides grown by rapid thermal oxidation

M. Depas, R.L. Van Meirhaeghe, W.H. Laflère, F. Cardon

Journal:

Microelectronic Engineering

Year:

1993

Language:

english

File:

PDF, 317 KB

english, 1993

21

A detailed XPS study of the rare earth compounds EuS and EuF3

R. Vercaemst, D. Poelman, L. Fiermans, R.L. Van Meirhaeghe, W.H. Laflère, F. Cardon

Journal:

Journal of Electron Spectroscopy and Related Phenomena

Year:

1995

Language:

english

File:

PDF, 759 KB

english, 1995

22

Study of the schottky barrier at the n- and p-type indium phosphide electrode/electrolyte interface

A.-M. Van Wezemael, W.H. Laflère, F. Cardon, W.P. Gomes

Journal:

Journal of Electroanalytical Chemistry and Interfacial Electrochemistry

Year:

1978

Language:

english

File:

PDF, 288 KB

english, 1978

23

Influence of the growth conditions on the properties of CaS:Eu electroluminescent thin films

D. Poelman, R. Vercaemst, R.L. Van Meirhaeghe, W.H. Laflère, F. Cardon

Journal:

Journal of Luminescence

Year:

1997

Language:

english

File:

PDF, 548 KB

english, 1997

24

XPS study of TbF3 and TbOF centres in ZnS

J. van den Bossche, K. A. Neyts, P. de Visschere, D. Corlatan, H. Pauwels, R. Vercaemst, L. Fiermans, D. Poelman, R. L. van Meirhaeghe, W. H. Laflére, F. Cardon

Journal:

physica status solidi (a)

Year:

1994

Language:

english

File:

PDF, 216 KB

english, 1994

25

A study of sputter-induced defects in magnetron-sputtered CoSi2and TiSi2Schottky barriers onn- andp-type GaP

E. Kabushemeye, R. L. Meirhaeghe, W. H. Laflère, F. Cardon

Journal:

Applied Physics A: Materials Science & Processing

Year:

1991

Language:

english

File:

PDF, 563 KB

english, 1991

26

The influence of Se co-evaporation on the electroluminescent properties of SrS:Ce thin films

D. Poelman, R.L. Van Meirhaeghe, W.H. Laflère, F. Cardon

Journal:

Journal of Luminescence

Year:

1992

Language:

english

File:

PDF, 509 KB

english, 1992

27

On interfacial charges in the oxide layer of mis-type Ag- and Au-n GaAs Schottky barriers

R.L. Van Meirhaeghe, W.H. Laflère, F. Cardon

Journal:

Solid-State Electronics

Year:

1983

Language:

english

File:

PDF, 340 KB

english, 1983

28

Comment on the paper entitled “characterization of the interface states at AlGaAs Schottky barriers with a thin interface layer”

R.L. Van Meirhaeghe, W.H. Laflere

Journal:

Solid-State Electronics

Year:

1984

Language:

english

File:

PDF, 83 KB

english, 1984

29

Defects introduced in InP by mechanical polishing and studied by means of Au- and Alp-InP Schottky barriers

L.M.O. Van den Berghe, R.L. Van Meirhaeghe, W.H. Laflère, F. Cardon

Journal:

Solid-State Electronics

Year:

1986

Language:

english

File:

PDF, 598 KB

english, 1986

30

A study of the electrical and photovoltaic properties of magnetron sputtered Ti/p-InP Schottky barriers

R.L. Van Meirhaeghe, L.M.O. Van den Berghe, W.H. Laflère, F. Cardon

Journal:

Solid-State Electronics

Year:

1988

Language:

english

File:

PDF, 645 KB

english, 1988

31

Metamorphic competence in aplysia californica cooper

L. Nadeau, J.A. Paige, V. Starczak, T. Capo, J. Lafler, J.P. Bidwell

Journal:

Journal of Experimental Marine Biology and Ecology

Year:

1989

Language:

english

File:

PDF, 1.66 MB

english, 1989

32

A Polar Modulator Using Self-Oscillating Amplifiers and an Injection-Locked Upconversion Mixer

Laflere, W., Steyaert, M.S.J., Craninckx, J.

Journal:

IEEE Journal of Solid-State Circuits

Year:

2008

Language:

english

File:

PDF, 1.31 MB

english, 2008

33

On the differential capacitance of the n- and p-type gallium arsenide electrode

W.H. Laflere, F. Cardon, W.P. Gomes

Journal:

Surface Science

Year:

1974

Language:

english

File:

PDF, 745 KB

english, 1974

34

On the frequency-dependence of the impedance of n- and p-type gallium arsenide electrodes

W.H Laflère, R.L Van Meirhaeghe, F Cardon, W.P Gomes

Journal:

Surface Science

Year:

1976

Language:

english

File:

PDF, 759 KB

english, 1976

35

On the frequency and voltage dependence of the impedance of n- and p-type GaAs/metal schottky barriers

W.H. Laflère, R.L. Van Meirhaeghe, F. Cardon, W.P. Gomes

Journal:

Surface Science

Year:

1978

Language:

english

File:

PDF, 845 KB

english, 1978

36

[IRE 1969 International Electron Devices Meeting - ()] 1969 International Electron Devices Meeting - Complementary transistors for monolithic integrated circuits

Chan, T.C., Lafler, L.R.

Year:

1969

Language:

english

File:

PDF, 103 KB

english, 1969

37

Influence of defect passivation by hydrogen on the Schottky barrier height of GaAs and InP contacts

Van Meirhaeghe, R. L., Laflere, W. H., Cardon, F.

Journal:

Journal of Applied Physics

Year:

1994

Language:

english

File:

PDF, 723 KB

english, 1994

38

OpenSQUID: A Flexible Open-Source Software Framework for the Control of SQUID Electronics

Jaeckel, Felix T., Lafler, R. J., Boyd, S. T. P.

Journal:

IEEE Transactions on Appiled Superconductivity

Year:

2013

Language:

english

File:

PDF, 521 KB

english, 2013

39

[IEEE ESSCIRC 2007 - 33rd European Solid-State Circuits Conference - Muenchen, Germany (2007.09.11-2007.09.13)] ESSCIRC 2007 - 33rd European Solid-State Circuits Conference - A power amplifier driver using self-oscillating pulse-width modulators

Laflere, Willem, Steyaert, Michiel, Craninckx, Jan

Year:

2007

Language:

english

File:

PDF, 426 KB

english, 2007

40

[IEEE 2011 IEEE International Symposium on Power Line Communications and Its Applications (ISPLC) - Udine, Italy (2011.04.3-2011.04.6)] 2011 IEEE International Symposium on Power Line Communications and Its Applications - Seamless evolution of PLAN+ base ARM systems using multicarrier communication technology

Lichtensteiger, Bill, Guillet, Vincent, Bjelajac, Branko, Valentin, Frederic, Laflere, Willem, Lebas, Pierre

Year:

2011

File:

PDF, 1.29 MB

2011

41

Large barrier tunnel metal-insulator-semiconductor structures

Hanselaer, P L, Meirhaeghe, R L Van, Laflere, W H, Cardon, F

Journal:

Semiconductor Science and Technology

Year:

1987

Language:

english

File:

PDF, 833 KB

english, 1987

42

Power SAS: A Survival Guide ||

Lafler, Kirk Paul

Year:

2002

Language:

english

File:

PDF, 28.13 MB

english, 2002

43

Effect of Moisture on Performance of SrS:Ce Thin Film Electroluminescent Devices

Poelman, Dirk, Vercaemst, Rita, Meirhaeghe, Roland Leon Van, Laflère, Willy Henri, Cardon, Felix

Journal:

Japanese Journal of Applied Physics

Year:

1993

File:

PDF, 627 KB

1993

44

Spectral shifts in thin film electroluminescent devices: an interference effect

Poelman, D, Meirhaeghe, R L Van, Laflere, W H, Cardon, F

Journal:

Journal of Physics D Applied Physics

Year:

1992

Language:

english

File:

PDF, 259 KB

english, 1992

45

Investigation of the C-V behaviour of GaAs-metal and GaAs-electrolyte contacts under forward bias

Laflere, W H, Meirhaeghe, R L Van, Cardon, F, Gomes, W P

Journal:

Journal of Physics D Applied Physics

Year:

1980

Language:

english

File:

PDF, 504 KB

english, 1980

46

Sibling relatedness and social play in juvenile ground squirrels

Nunes, Scott, Weidenbach, Jessica N., Lafler, Marissa R., Dever, Jennifer A.

Journal:

Behavioral Ecology and Sociobiology

Year:

2015

Language:

english

File:

PDF, 435 KB

english, 2015

47

The influence of silicide formation on the barrier height of Ti/Si MIS Schottky barriers

Bosscher, W De, Meirhaeghe, R L Van, Hanselaer, P L, Caenepeel, L, Laflere, W H, Cardon, F

Journal:

Semiconductor Science and Technology

Year:

1986

Language:

english

File:

PDF, 686 KB

english, 1986

48

On the influence of the thin interfacial oxide layer on the electrical and photovoltaic properties of Au/oxide/p-InP diodes

Song, Y P, Meirhaeghe, R L Van, Laflere, W H, Cardon, F

Journal:

Semiconductor Science and Technology

Year:

1987

Language:

english

File:

PDF, 609 KB

english, 1987

49

Characteristics of the RuO 2 -n-GaAs Schottky barrier

Vandenbroucke, D A, Meirhaeghe, R L van, Laflere, W H, Cardon, F

Journal:

Journal of Physics D Applied Physics

Year:

1985

Language:

english

File:

PDF, 467 KB

english, 1985

50

On the influence of the surface pretreatment of a Si substrate on cobalt silicide formation

A. L. D. Laere, R. L. V. Meirhaeghe, W. H. Laflere, F. Cardon

Year:

1990

Language:

english

File:

PDF, 622 KB

english, 1990

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